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鋰電保護(hù)
充電管理
線性穩(wěn)壓
LED驅(qū)動(dòng)
DC-DC轉(zhuǎn)換器
精密電源
快充協(xié)議
復(fù)位
霍爾開關(guān)
運(yùn)算放大器
邏輯電路
其他

DW01A

Features
1)High accuracy voltage detection
Overcharge detection voltage 4.300V
Overcharge release voltage 4.100V
Over discharge detection voltage 2.400V
Over discharge release voltage 3.000V

2)Discharge overcurrent detection function
Discharging overcurrent detection voltage 0.150V
Short-circuit detection voltage 1.000V

3)Charging overcurrent detection voltage -0.150V

4)Load Detection function
5)Charger Detection function
6)0 V battery charge function
7)Ultra-low power dissipation
Normal mode 1.5 μA (TyP.)(Ta= +25°C)
Overdischarge mode 0.7 μA (Typ.)(Ta= +25°C)
8)RoHS, PB-Free, HF

DW01A

特性
● 工作電流低 
● 過(guò)充檢測(cè) 4.30V,過(guò)充釋放 4.10V  
● 過(guò)放檢測(cè) 2.4V,過(guò)放釋放 3.0V 
● 充電過(guò)流檢測(cè)-0.15V,放電過(guò)流檢測(cè) 0.15V 
● 短路電流檢測(cè) 1.0V 
● 充電器檢測(cè) 
● 過(guò)電流保護(hù)復(fù)位電阻 
● 帶自恢復(fù)功能 
0V 充電使能 
● 工作電壓范圍廣 
● 封裝:SOT23-6L

DW01AD

2. Features
● Ultra-Low Quiescent Current at 4μA(VDD=3.9V). 
● Precision Overcharge Detection Voltage 4.30V & Over charge release Voltage 4.10V 
● Precision Over discharge detection Voltage 2.5V & Over discharge release Voltage 2.9V 
● Precision Overcurrent detection Voltage 0.16V & Short circuit current detection Voltage 1.3V 
● Automatically detect the charger connection 
● Automatically detect the current detection reset resistor 
● With self recovery function 
● with 0V charging enable 
● Wide operating voltage range 
● The ultra-small package of SOT23-6 

DW01A

Features
 Reduction in Board Size due to Miniature Package SOT-23-6.
 Ultra-Low Quiescent Current at 3μA (Vcc=3.6V).
 Overdischarge Current at 4μA (Vcc= V).
 Precision Overcharge Protection Voltage 4.3V ± 50mV
 Two Detection Levels for Overcurrent Protection.
 Delay times are generated by internal circuits. No external capacitors required. 

PT6006C

1. 功能
? 支持多種PDO功率:
? 18W/20W/25W
? ESD級(jí)別:8kV HBM and 400V MM contact
? 工作溫度:-40OC ~ +125OC
? 封裝: SOT23-6L
? 符合 RoHS 標(biāo)準(zhǔn),無(wú)鹵素 

PT6006AC

Feature
USB-C and USB-A dual port operation with cost effective single power source

USB-C Charging Standard Identification:
1.USB Power Delivery 3.0 Fix PDO
2.USB Power Delivery 3.0 PPS 3.3-11V
3.USB Type C Cc-logic 5V3A
4.BC 1.2 & YD/T1591-2009
5.Qualcomm QC2 and QC3
6.Apple 12W
7.AFC/FCP
8.Private Low Voltage Charging

USB-A Charging Standard ldentification:
1.BC 1.2 & YD/T1591-2009
2.Qualcomm QC2 and QC3
3.Apple 12w
4.AFC/FCP
5.Private Low Voltage Charging

CC pins HV protection up to 12V
2kV HBM and 1KV CDM ESD Level
-40℃~+125℃ 0peratingTemperature
Package:TSSOP-16L,QFN-16L
RoHS compliant and Halogen free

TL432

FEATURES
Low dynamic output impedance
The effective temperature compensation in the working range of full temperature
Low output noise voltage
Fast on -state response
Sink current capability of 0.1mA to100mA

TL431N

FEATURES
Equivalent Full Range Temperature Coefficient 50PPM/℃ 
Temperature Compensated For Operation Over Full Rate Operating Temperature Range
Adjustable Output Voltage
Fast Turn-on Response
Sink Current Capability 1mA to 100mA
Low (0.2? Typ.) Dynamic Output Impedance
Low Output Noise 

TL431C

FEATURES
● Equivalent Full Range Temperature Coefficient 50PPM/℃ 
● Temperature Compensated For Operation Over Full Rate Operating Temperature Range 
● Adjustable Output Voltage 
● Fast Turn-on Response 
● Sink Current Capability 1? to 100? 
● Low (0.2? Typ.) Dynamic Output Impedance 
● Low Output Noise

PT251

特點(diǎn)
? 低功耗
- 5Hz版本:1.6uA@1.8V 
- 20Hz版本:3.3uA@1.8V
? 寬工作電壓范圍:1.6V~5.5V
? 磁場(chǎng)閾值可選(Bop
- 33Gs 低閾值
- 46Gs 高閾值
? 全極磁場(chǎng)檢測(cè)
? CMOS推挽輸出
? 封裝:SOT-23-3L SOT-553 TO-92S
? 工作溫度范圍:-40~85
? 卓越的ESD性能:HBM 8KV
? 符合RoHS標(biāo)準(zhǔn)

PT809

特點(diǎn)
? 精確的復(fù)位閾值:±2.5%
? 最小140ms的復(fù)位脈沖寬度
? 低工作電流:3V時(shí)典型值3.2μA
? 復(fù)位信號(hào)在電源電壓低至1.15V時(shí)仍能維持可靠輸出
? 對(duì)短時(shí)間電源突降的過(guò)濾功能
? 工作溫度范圍:-40°C to +85°C 

PT4058

特點(diǎn):
? 獨(dú)立的單節(jié)鋰電池充電管理集成電路
? 輸入電壓范圍:3.8V 6V
? 片內(nèi)功率晶體管
? 不需要外部阻流二極管和電流檢測(cè)電阻
? 恒壓充電電壓 4 . 2 V,也可通過(guò)一個(gè)外部電阻 向上調(diào)整
? 為了激活深度放電的電池和減小功耗,在電 池電壓較低時(shí)采用小電流的預(yù)充電模式
? 可設(shè)置的持續(xù)恒流充電電流可達(dá) 1 A 
? 采用恒流/恒壓/恒溫模式充電,既可以使充 電電流最大化,又可以防止芯片過(guò)熱
? 電源電壓掉電時(shí)自動(dòng)進(jìn)入低功耗的睡眠模式
? 充電狀態(tài)和充電結(jié)束狀態(tài)指示輸出
? C/10充電結(jié)束檢測(cè)
? 自動(dòng)再充電
? 電池溫度監(jiān)測(cè)功能
? 封裝形式ESOP8
? 產(chǎn)品無(wú)鉛,滿足rohs,不含鹵素

PT4057

特性
◆可編程充電電流500mA 
◆無(wú)需外接MOSFET,檢測(cè)電阻以及隔離二極管 
◆用于單節(jié)鋰電池、采用SOT23-6封裝的完整線性充電器 
◆恒定電流/恒定電壓操作,并具有可在無(wú)過(guò)熱危險(xiǎn)的情 況下實(shí)現(xiàn)充電速率最大化的熱調(diào)節(jié)功能。 
◆精度達(dá)到-1%、+2%的4.2V預(yù)充電電壓 
◆用于電池電量檢測(cè)的充電電流監(jiān)控器輸出 
◆自動(dòng)再充電 
◆充電狀態(tài)雙輸出、無(wú)電池和故障狀態(tài)顯示 
◆C/10充電終止 
◆待機(jī)模式下的靜態(tài)電流為25uA 
◆2.9V涓流充電 
◆軟啟動(dòng)限制浪涌電流 
BAT輸入防反接保護(hù)

PT4056S

特性
◆可編程充電電流1000mA 
◆無(wú)需外接MOSFET,檢測(cè)電阻以及隔離二極管 
◆用于單節(jié)鋰電池、采用ESOP8封裝的完整線性充電器 
◆恒定電流/恒定電壓操作,并具有可在無(wú)過(guò)熱危險(xiǎn)的情況 下實(shí)現(xiàn)充電速率最大化的熱調(diào)節(jié)功能。 
◆充電截至精度:4.2V-1% ~ 4.2V2%
◆用于電池電量檢測(cè)的充電電流監(jiān)控器輸出 
◆自動(dòng)再充電 
◆充電狀態(tài)雙輸出、無(wú)電池和故障狀態(tài)顯示
◆C/10充電終止
◆停機(jī)模式下的靜態(tài)電流為35uA 
◆2.9V涓流充電 
◆電池溫度監(jiān)測(cè) 
◆軟啟動(dòng)限制浪涌電流 
◆BAT輸入防反接保護(hù) 
◆可 0V 激活

PT4054B

特點(diǎn)
可編程充電電流高達(dá)800mA
無(wú)需外接MOSFET,檢測(cè)電阻以及隔離二極管
用于單節(jié)鋰電池、采用ESOP8封裝的完整線性充電器
恒定電流/恒定電壓操作,并具有可在無(wú)過(guò)熱危險(xiǎn)的情 況下實(shí)現(xiàn)充電速率最大化的熱調(diào)節(jié)功能。
充電截至精度:4.2V-1% ~ 4.2V2%
用于電池電量檢測(cè)的充電電流監(jiān)控器輸出
自動(dòng)再充電
充電狀態(tài)、無(wú)電池和故障狀態(tài)顯示
C/10充電終止
停機(jī)模式下的靜態(tài)電流為35uA
2.9V涓流充電
軟啟動(dòng)限制浪涌電流
BAT輸入防反接保護(hù)
0V激活 

PT4054

特點(diǎn)
可編程使充電電流可達(dá)500mA.
不需要MOSFET,傳感電阻和阻塞二極管
恒電流/恒電壓運(yùn)行和熱度調(diào)節(jié)使得電池管理效力
最高,沒(méi)有熱度過(guò)高的危險(xiǎn)
USB 接口管理單片鋰離子電池
預(yù)設(shè)充電電壓為4.2V±1%
充電電流輸出監(jiān)控
充電狀態(tài)指示標(biāo)志
1/10充電電流終止
停止工作時(shí)提供25μA 電流
2.9V涓流充電閾值電壓
軟啟動(dòng)限制浪涌電流電流
電池反接保護(hù)

PH4056H

特性
? 最高輸入電壓:30V
? 充電截止精度:4.2V ±1%
? 過(guò)壓保護(hù)電壓:7.3V
? 最大充電電流:1000mA
? 涓流/恒流/恒壓三段式充電
? 無(wú)需 MOSFET、檢測(cè)電阻器和隔離二極管
? 智能熱調(diào)節(jié)功能可實(shí)現(xiàn)充電速率最大化
? 智能再充電功能
? BAT 輸入防反接保護(hù)
? 待機(jī)模式靜態(tài)電流:1.2μA
? C/5 充電終止
? 2.9V 涓流充電閾值
? 充電狀態(tài)指示
? 0V激活
? 封裝形式: ESOP8 

PH4054H

特性
? 最高輸入電壓:30V
? 充電截止精度:4.2V ±1%
? 過(guò)壓保護(hù)電壓:7.3V
? 最大充電電流:500mA
? 涓流/恒流/恒壓三段式充電
? 無(wú)需 MOSFET、檢測(cè)電阻器和隔離二極管
? 智能熱調(diào)節(jié)功能可實(shí)現(xiàn)充電速率最大化
? 智能再充電功能
? BAT 輸入防反接保護(hù)
? 待機(jī)模式靜態(tài)電流:1.2μA
? C/5 充電終止
? 2.9V 涓流充電閾值
? 充電狀態(tài)指示
? 0V激活
? 封裝形式: SOT23-5L 

PT4115

特點(diǎn)
? 最大輸出電流:1.2A
? 寬輸入電壓范圍:8V40V
? 高電流精度:±3%
? 高效率:95%
? 負(fù)載開路和短路保護(hù)
? PWM 和線性調(diào)光
? 滯環(huán)控制:無(wú)需補(bǔ)償
? 最高工作頻率:1MHz
? 內(nèi)置過(guò)溫電流補(bǔ)償控制
? DIM 腳接 NTC 電阻到地實(shí)現(xiàn)過(guò)溫電流 補(bǔ)償
? DIM 腳接電阻到地實(shí)現(xiàn)亮度調(diào)節(jié)

PT6113

Features
? 2.5V~5.5V input voltage range
? 35uA ultra-low quiescent current
? Internal soft-start reduces chip stress
? Input Overvoltage Protection (OVP)
? Short circuit protection Hiccup mode
? Internal integrated low RDS(ON) switch
? 1.0 MHz switching frequency minimizes external components
? Optimized PFM mode for battery applications to improve light-load efficiency and extend battery life
? 100% duty cycle supports input and output low dropout operation
? RoHS Compliant and Halogen Free
? PT6113M5:SOT23-5 / PT6113M6:SOT23-6 / PT6113F8:DFN2×2-8 / PT6113FC:DFN3x3-10 package 

PT6112

Features
? 2.5V~5.5V input voltage range
? 35uA ultra-low quiescent current
? Internal soft-start reduces chip stress
? Input Overvoltage Protection (OVP)
? Short circuit protection Hiccup mode
? Internal integrated low RDS(ON) switch
? 1.5MHz switching frequency minimizes external components
? Optimized PFM mode for battery applications to improve light-load efficiency and extend battery life
? 100% duty cycle supports input and output low dropout operation
? RoHS Compliant and Halogen Free
? PT6112M5:SOT23-5 / PT6112M6:SOT23-6 package 

PT6111

Features
? 2.5V~5.5V input voltage range
? 35uA ultra-low quiescent current
? Internal soft-start reduces chip stress
? Input Overvoltage Protection (OVP)
? Short circuit protection Hiccup mode
? Internal integrated low RDS(ON) switch
? 1.5MHz switching frequency minimizes external components
? Optimized PFM mode for battery applications to improve light-load efficiency and extend battery life
? 100% duty cycle supports input and output low dropout operation
? RoHS Compliant and Halogen Free
? PT6111M5:SOT23-5 / PT6111M6:SOT23-6 package

PH6122

主要特點(diǎn)
? 0.6V±2% 輸出電壓精度
? 4.5V-18V的輸入電壓范圍
? 最大2A的輸出電流
? 輸出電壓范圍0.6V~5V
? 高效率的同步整流模式
? 500KHz的開關(guān)頻率
? 快速的瞬態(tài)響應(yīng)特性
? 內(nèi)置HICCUP功能
? 輸出短路保護(hù)功能
? 限流保護(hù)
? 短路保護(hù)
? 內(nèi)置軟啟動(dòng)
? 輸入欠壓鎖定
? 輸出過(guò)壓和欠壓保護(hù)
? 過(guò)溫保護(hù)
? SOT23-6L封裝

PT6291

特點(diǎn)
效率高達(dá)93%
可調(diào)升壓輸出至12V
內(nèi)部固定PWM工作頻率:1MHz
輸入過(guò)壓保護(hù)(<6V)
輸出短路保護(hù)
輸出過(guò)壓保護(hù)
FB基準(zhǔn)電壓0.6V
工作溫度-40℃至85℃
內(nèi)置軟啟動(dòng)功能 

PT2005

特點(diǎn)
支持 DCM 和 QR 模式
內(nèi)部集成低內(nèi)阻的N溝道功率MOSFET
開關(guān)轉(zhuǎn)換速度快、反向恢復(fù)時(shí)間短
特有的自供電技術(shù),無(wú)需外部電源供電
內(nèi)置多重保護(hù)
外圍應(yīng)用器件少
靜態(tài)功耗小

PT35XX

特點(diǎn)
支持 DCM 和 QR 模式
內(nèi)部集成低內(nèi)阻的N溝道功率MOSFET
開關(guān)轉(zhuǎn)換速度快、反向恢復(fù)時(shí)間短
特有的自供電技術(shù),無(wú)需外部電源供電
內(nèi)置多重保護(hù)
外圍應(yīng)用器件少
靜態(tài)功耗小

PT2280

FEATURES

Primary Side Constant-Current (cc) Control for DCM and CCM Operation
±5% CC Regulation;   ±1% CV Regulation
Less than 75mW Standby Power
Fixed 65KHz Switching Frequency
Green Mode and Burst Mode Control
Very Low Startup and Operation Current.  
Built-in Frequency Shuffling to Reduce EMI  
Built-in Current Mode Control with internal Slope Compensation
Built-in Line & inductance Compensation for cc Operation
Built-in Protections with Auto Recovery:
VDD Under Voltage Lockout (UVO)
VDD Over Voltage Protection (OVP)
On-Chip Thermal Shutdown (OTP)
Cycle-by-Cycle Current Limiting
Over Load Protection (OLP)
Short Circuit Protection (SCP)
Leading Edge Blanking (LEB)
CS Pin Float Protection

PT7200XS

特點(diǎn)
內(nèi)置 800V 功率 BJT
高效率準(zhǔn)諧振一次側(cè)調(diào)節(jié)控制(PSR-QR)
無(wú)需外部電容補(bǔ)償
恒壓恒流精度高
可編程線損補(bǔ)償
過(guò)溫保護(hù)(0TP)
過(guò)壓保護(hù)和鉗位(0VP)短路保護(hù)(SLP)
輸出電壓保護(hù)(0VP&Clamp)
低待機(jī)功耗≤75mW
采用 SOP-7 封裝
建議設(shè)計(jì)輸出電壓在12V(含12V)以下應(yīng)用

PT2783XS

特點(diǎn)
內(nèi)置 800V 功率 BJT
高效率準(zhǔn)諧振一次側(cè)調(diào)節(jié)控制(PSR-QR)
無(wú)需外部電容補(bǔ)償
恒壓恒流精度高
可編程線損補(bǔ)償
過(guò)溫保護(hù)(0TP)
過(guò)壓保護(hù)和鉗位(0VP)短路保護(hù)(SLP)
輸出電壓保護(hù)(0VP&Clamp)
低待機(jī)功耗≦75mW
采用 SOP-7 封裝
建議設(shè)計(jì)輸出電壓在12V(含12V)以下應(yīng)用

PT2773XS

特點(diǎn)
原邊反饋控制高精度恒流、恒壓
75mW待機(jī)功耗
內(nèi)置 800V 三極管
內(nèi)置線電壓補(bǔ)償、負(fù)載補(bǔ)償和恒流補(bǔ)償可調(diào)線損補(bǔ)償
隨機(jī)頻率抖動(dòng)調(diào)制減少系統(tǒng)電磁干擾
可調(diào)線損補(bǔ)償
過(guò)溫補(bǔ)償(OTP)
輸出電壓保護(hù)(OVP)、短路保護(hù)(SLP)
VCC過(guò)壓保護(hù)和鉗位(0VP/Clamp)
建議設(shè)計(jì)輸出電壓在12V(含12V)以下應(yīng)用

PT1812XS

特點(diǎn)
內(nèi)置 800V 功率 BJT
高效率準(zhǔn)諧振一次側(cè)調(diào)節(jié)控制(PSR-QR)
無(wú)需外部電容補(bǔ)償
恒壓恒流精度高
可編程線損補(bǔ)償
過(guò)溫保護(hù)(OTP)
過(guò)壓保護(hù)和鉗位(0VP)短路保護(hù)(SLP)
輸出壓保護(hù)(0VP&Clamp)
低待機(jī)功耗三75mW
采用 SOP-7 封裝
建議設(shè)計(jì)輸出電壓在12V(含12V)以下應(yīng)用

PT712XS

特點(diǎn)
原邊反饋控制高精度恒流、恒壓
75mW 待機(jī)功耗
內(nèi)置 800V 三極管
內(nèi)置線電壓補(bǔ)償、負(fù)載補(bǔ)償和恒流補(bǔ)償
■ 可調(diào)線損補(bǔ)償
■ 隨機(jī)頻率抖動(dòng)調(diào)制減少系統(tǒng)電磁干擾
過(guò)溫補(bǔ)償 (OTP) 
 輸出電壓保護(hù)(OVP)、短路保護(hù)(SLP)
 VCC過(guò)壓保護(hù)和鉗位(OVP/Clamp)
建議設(shè)計(jì)輸出電壓在12V(含12V)以下應(yīng)用

PT250X

n Features
 ? Integrated with 650V MOSFET ? Support Flyback and Buck Topology:
? Flyback PSR Control (SEL= Floating)
? QR-Buck CC Control (SEL= GND)
?? Multi Mode PSR Control
?? Audio Noise Free Operation for PSR
?? Optimized Dynamic Response for PSR
?? Low Standby Power <70mW
?? ±4% CC and CV Regulation
?? Programmable Cable Drop Compensation
(CDC) in PSR CV Mode
?? Built-in AC Line & Load CC Compensation
?? Build in Protections:
? Short Load Protection (SLP)
? On-Chip Thermal Shutdown (OTP)
? Cycle-by-Cycle Current Limiting
? Leading Edge Blanking (LEB)
? Pin Floating Protection
?? VDD UVLO OVP & Clamp
?? Package: SOP-7

PTP5N65-E

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 15 nC (Typ.)
●BVDSS=650V,ID=4.5A
●Lower RDS(on) : 2.7Ω (Max) @VG=10V
●100% Avalanche Tested

PTP2N80

800V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge :Qg= 13nC (Typ.)
●BVDSS=800V,ID=3A
●RDS(on) : 5 Ω (Max) @VG=10V
●100% Avalanche Tested

PTP01H11

Description
The PTP01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

General Features
● VDS =100V,ID =110ARDS(ON) <9mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply

PTP01H10

Description
The PTP01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features

● VDS = 100V,ID =100ARDS(ON) < 11mΩ @ VGS=10V (Typ:9.9mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply

PTF12N60

Features
■ RDS(on) (Max 0.70 Ω )@VGS=10V
■ Gate Charge (Typical 50nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

PTF10N65

Features
■ RDS(on) (Typical 0.70 Ω )@VGS=10V
■ Gate Charge (Typical 45nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.

PTF10N60

Features
10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V
Low gate charge ( typical 48nC)
High ruggedness
Fast switching
100% avalanche tested
Improved dv/dt capability
?

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